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| Semiconductor STD13005F NPN Silicon Power Transistor Features * High speed switching * VCEO(sus)=400V * Suitable for Switching Regulator and Motor Control Ordering Information Type NO. STD13005F Marking STD13005 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H019-000 1 STD13005F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total Power dissipation (Tc=25) Junction temperature Storage temperature (Tc=25) Symbol VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg Ratings 700 400 9 4 8 2 4 30 150 -55~150 Unit V V V A A A A W C C Electrical Characteristics Characteristic Collector-Emitter sustaining voltage Collector cut-off current Emitter cut-off current DC Current gain (Tc=25) Symbol VCE(sus) ICEV IEBO hFE* Test Condition IC=10mA, IB=0 VCEV=Rated Value VBE(off)=1.5V VEB=9V, IC=0 IC=1A, VCE=5V IC=2A, VCE=5V IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A Min. Typ. Max. 400 10 8 4 65 1 1 60 40 0.5 0.6 1 1.2 1.6 0.8 4 0.9 Unit V mA mA Collector-Emitter saturation voltage VCE(sat)* V Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time VBE(sat)* fT Cob tON tSTG tF IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V,IC=2A, RL=62.5 IB1=-IB2=0.4A V MHz pF - * Pulse test: PW300 , Duty cycle2% Pulse KST-H019-000 2 STD13005F Electrical Characteristic Curves Fig. 1 PD - TC Fig. 2 VBE(sat) , VCE(sat) - IC Fig. 3 hFE-IC Fig. 4 Turn off time Fig. 5 Turn on time Fig. 6 Capacitance KST-H019-000 3 STD13005F Fig. 7 Safe Operating Area KST-H019-000 4 |
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